backgated

With simultaneous measurement of channel conductivity and its slow time-dependent fluctuation (or noise) in ultra-thin WSe2 and MoS2 FETs on insulating SiO2 substrates, where noise arises from McWhorter-type carrier number fluctuations, we establish that the switching in conventional backgated TMDC FETs is a classical percolation transition in a medium of inhomogeneous carrier density distribution.

2015, Tathagata Paul, Subhamoy Ghatak, Arindam Ghosh, “Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature”, in arXiv