interstrip

Recent implementations of additional traps at the SiO#95;2/Si interface or close to it have expanded the scope of the experimentally agreeing simulations to such surface properties as the interstrip resistance and capacitance, and the position dependency of CCE for strip sensors irradiated up to #92;sim1.5#92;times10#123;15#125; n#95;#123;#92;textrm#123;eq

2015, Timo Peltola, “Simulation of radiation-induced defects”, in arXiv